4-207 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 tc1426 TC1427 tc1428 general description the tc1426/27/28 are a family of 1.2a dual high- speed drivers. cmos fabrication is used for low power consump- tion and high efficiency. these devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor respon- sible for cmos latch-up. they incorporate a number of other design and process refinements to increase their long-term reliability. the tc1426 is compatible with the bipolar ds0026, but only draws 1/5 of the quiescent current. the tc1426/27/28 are also compatible with the tc426/27/28, but with 1.2a peak output current rather than the 1.5a of the tc426/27/28 devices. other compatible drivers are the tc4426/27/28 and the tc4426a/27a/28a. the tc4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5v with diode protection circuits. the tc4426a/27a/28a have matched input to output leading edge and falling edge delays, td1 and td2, for processing short duration pulses in the 25 nanoseconds range. all of the above drivers are pin compatible. the high-input impedance tc1426/27/28 drivers are cmos/ttl input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most pwm ics. this family of devices is available in inverting and non- inverting versions. specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer. features n low cost n latch-up protected: will withstand 500 ma reverse output current n esd protected ................................................... 2 kv n high peak output current ........................ 1.2a peak n high capacitive load drive capability ...................................... 1000pf in 38nsec n wide operating range ........................... 4.5v to 16v n low delay time ...................................... 75nsec max n logic input threshold independent of supply voltage n output voltage swing to within 25mv of ground or v dd n low output impedance ........................................ 8 w applications n power mosfet drivers n switched mode power supplies n pulse transformer drive n small motor controls n print head drive 1.2a dual high-speed mosfet drivers ordering information part no. package temp. range tc1426coa 8-pin soic 0 c to +70 c tc1426cpa 8-pin plastic dip 0 c to +70 c TC1427coa 8-pin soic 0 c to +70 c TC1427cpa 8-pin plastic dip 0 c to +70 c tc1428coa 8-pin soic 0 c to +70 c tc1428cpa 8-pin plastic dip 0 c to +70 c tc1426cpa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b v dd nc = no connection 2, 4 7, 5 inverting TC1427cpa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b 2, 4 7, 5 non-inverting tc1428cpa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b 27 45 v dd v dd tc1426coa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b v dd nc = no connection 2, 4 7, 5 inverting TC1427coa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b 2, 4 7, 5 non-inverting tc1428coa 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b 27 45 v dd v dd pin configurations input v + ' 2.5ma ' 500 a note: tc1428 has one inverting and one noninverting driver. ground any unused driver input. inverting output noninverting output (tc1426) (TC1427) gnd tc1426 inverting TC1427 noninverting tc1428 inverting/noninverting functional block diagram tc1426/7/8-8 10/11/96
4-208 telcom semiconductor, inc. 1.2a dual high-speed mosfet drivers tc1426 TC1427 tc1428 electrical characteristics: t a = 25 c with 4.5v v dd + 16v unless otherwise specified. symbol parameter test conditions min typ max unit input v ih logic 1, input voltage 3 v v il logic 0, input voltage 0.8 v i in input current 0v v in v dd C 1 1 m a output v oh high output voltage test figures 1 and 2 v dd C 0.025 v v ol low output voltage test figures 1 and 2 0.025 v r o output resistance v in = 0.8v, 12 18 w i out = 10 ma, v dd = 16v v in = 3v, 8 12 i out = 10 ma, v dd = 16v i pk peak output current 1.2 a i latch-up current withstand reverse current > 500 ma switching time (note 1) t r rise time test figures 1 and 2 35 nsec t f fall time test figures 1 and 2 25 nsec t d1 delay time test figures 1 and 2 75 nsec t d2 delay time test figures 1 and 2 75 nsec power supply i s power supply current v in = 3v (both inputs) 9 ma v in = 0v (both inputs) 0.5 note: 1. switching times guaranteed by design. absolute maximum ratings* power dissipation (t a 70 c) plastic dip ...........................................................730w soic ................................................................ 470 mw derating factor plastic dip ..................................................... 8 mw/ c soic .............................................................. 4 mw/ c supply voltage ............................................................18v input voltage, any terminal .. (v dd + 0.3v) to (gnd C 0.3v) operating temperature : c version .............. 0 c to +70 c e version ......... C 40 c to +85 c *stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum chip temperature ................................. +150 c storage temperature ............................. +65 c to +150 c lead temperature (soldering ,10 sec) ................. +300 c
4-209 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 1.2a dual high-speed mosfet drivers tc1426 TC1427 tc1428 electrical characteristics: over operating temperature range with 4.5v v dd + 16v unless otherwise specified. symbol parameter test conditions min typ max unit input v ih logic 1, input voltage 3 v v il logic 0, input voltage 0.8 v i in input current 0v v in v dd C 10 10 m a output v oh high output voltage test figures 1 and 2 v dd C 0.025 v v ol low output voltage test figures 1 and 2 0.025 v r o output resistance v in = 0.8v, 15 23 w i out = 10ma, v dd = 16v v in = 3v, 10 18 i out = 10ma, v dd = 16v i latch-up current withstand reverse current > 500 ma switching time (note 1) t r rise time test figures 1 and 2 60 nsec t f fall time test figures 1 and 2 40 nsec t d1 delay time test figures 1 and 2 125 nsec t d2 delay time test figures 1 and 2 125 nsec power supply i s power supply current v in = 3v (both inputs) 13 ma v in = 0v (both inputs) 0.7 note: 1. switching times guaranteed by design. supply bypassing large currents are required to charge and discharge capacitive loads quickly. for example, charging a 1000-pf load to 16v in 25nsec requires an 0.8a current from the device power supply. to guarantee low supply impedance over a wide fre- quency range, a parallel capacitor combination is recom- mended for supply bypassing. low-inductance ceramic mlc capacitors with short lead lengths (< 0.5-in.) should be used. a 1.0- m f film capacitor in parallel with one or two 0.1- m f ceramic mlc capacitors normally provides adequate bypassing. grounding the tc1426 and tc1428 contain inverting drivers. individual ground returns for the input and output circuits or a ground plane should be used. this will reduce negative feedback that causes degradation in switching speed char- acteristics. input stage the input voltage level changes the no-load or quies- cent supply current. the n-channel mosfet input stage transistor drives a 2.5 ma current source load. with a logic "1" input, the maximum quiescent supply current is 9ma. logic "0" input level signals reduce quiescent current to 500 m a maximum. unused driver inputs must be connected to v dd or gnd . minimum power dissipation occurs for logic "0" inputs for the tc1426/27/28. the drivers are designed with 100 mv of hysteresis. this provides clean transitions and minimizes output stage current spiking when changing states. input voltage thresh- olds are approximately 1.5v, making logic "1" input any voltage greater than 1.5v up to v dd . input current is less than 1 m a over this range. the tc1426/27/28 may be directly driven by the tl494, sg1526/27, tc38c42, tc170 and similar switch-mode power supply integrated circuits.
4-210 telcom semiconductor, inc. 1.2a dual high-speed mosfet drivers tc1426 TC1427 tc1428 output input 0.1 f mlc v dd 90% 10% 10% 10% t d1 t r t d2 t f 90% c = 1000pf l 1 f wima mks-2 = 16v TC1427 (1/2 tc1428) +5v input v dd output 0v 0v 90% test circuit 1 2 output input 0.1 f mlc v dd +5v input 10% 90% 10% 90% 10% 90 % v dd output t d1 t f t r t d2 c = 1000pf l 1 f wima mks-2 = 16v 0v 0v tc1426 (1/2 tc1428) 1 2 test circuit figure 2. non-inverting driver switching time figure 1. inverting driver switching time
4-211 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 typical characteristics 550 440 330 220 110 0 579111315 time (nsec) v dd 10,000pf 4700pf 2200pf rise time vs. supply voltage 330 264 198 132 66 0 time (ns) 10,000pf 2200pf 4700pf 57 9111315 v dd fall time vs. supply voltage c = 1000pf l t d1 time (nsec) 5 7 9 11 13 15 v dd 80 70 60 50 40 30 delay time vs. supply voltage t d2 40 32 24 16 8 0 25 45 65 85 105 125 temperature (?) time (nsec) rise t fall t c = 1000pf l v = +15v dd rise and fall times vs. temperature c = 1000pf l v = +15v dd 60 54 48 42 36 0 25 45 65 85 105 125 temperature (?) time (nsec) d1 t t d2 delay time vs. temperature 30 24 18 12 6 0 100 520 940 1360 1780 2200 supply current (ma) capacitive load (pf) 500khz 200khz 20khz c = 1000pf l v = 15v dd supply current vs. capacitive load capacitive load (pf) 100 1000 10,000 1000 100 10 10 v dd time (nsec) 5 v dd 15 v dd rise time vs. capacitive load 1000 100 10 100 1000 10,000 capacitive load (pf) time (nsec) 5v dd 10v dd fall time vs. capacitive load 15v dd c = 1000pf l 100 80 60 40 20 0 10 100 1000 10,000 v = 15v dd v = 10v dd v = 5v dd frequency (khz) supply current (ma) supply current vs. frequency t a = +25? t a = +25? t a = +25? t a = +25? t a = +25? t a = +25? t a = +25? (v) (v) (v) 1.2a dual high-speed mosfet drivers tc1426 TC1427 tc1428
4-212 telcom semiconductor, inc. typical characteristic (cont.) 100ma 50ma 10ma 15 13 11 9 7 5 5 79 11 13 15 v dd out w r ( ) low-state output resistance t a = +25? (v) 50 42 34 26 18 10 5 7 9 11 13 15 v dd 100ma 50ma 10ma high-state output resistance t a = +25 c (v) r out ( w ) 200 0 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 ambient temperature ( c) max. power (mv) 8 pin dip thermal derating curves 8 pin cerdip 8 pin soic 10 a (sec) -8 10 -9 10 -10 46 81012141618 v dd (v) crossover energy loss t a = +25? 20 15 10 5 0 1 234 56 supply voltage (v) supply current (ma) both inputs logic ? quiescent power supply current vs. supply voltage 0 20 15 10 5 0 supply voltage (v) 50 100 150 200 300 400 supply current ( a) quiescent power supply current vs. supply voltage both inputs logic ? 1.2a dual high-speed mosfet drivers tc1426 TC1427 tc1428
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